ELECTROPHYSICAL PROPERTIES OF CONTACTS WITH IRSI – SI SCHOTTKY BARRIER
Abstract
Holes in N2 atmosphere were detected on the IrSi surface, obtained by magnetron spraying, the same defects are observed in IrSi, obtained by method of thermal evaporation in vacuum. The decrease in defects size by annealing in a N2 + H2 + O2 gas mixture is due to iridium decomposing the neutral hydrogen atoms, which in turn interact with the adsorbed oxygen, and are further desorbed or replaced to the silicon surface by temperature increasing.
About the Author
E. A. Kerimov
National Aerospace Agency of Azerbaijan
Russian Federation
Elchin A. Kerimov – Candidate of Physics and Mathematics, Associate Professor, Head of the Department
Russian Federation
Elchin A. Kerimov – Candidate of Physics and Mathematics, Associate Professor, Head of the Department
References
1. Мюрарка, Ш. Силициды для СБИС / Ш. Мюрарка. – М.: Мир, 1986. – С. 136 – 137.
2. Тришенков, М. А. Фотоприемные устройства и ПЗС / М. А. Тришенков. – М.: Радио и связь, 1992. – 400 с.
3. Elliott, С. T. Future infrared detector technologies / С. Т. Elliott // Fourth Int. Conf. on Advanced Infrared Detectors and Systems. – 1990. – P. 61 – 66.
4. Byrne, C. F. Infrared photodiodes formed in mercury cadmium telluride grown by MOCVD / C. F. Byrne, P. Knowles // Semicond. Sci. Technol. – 1988. – № 3. – P. 377 – 381.
Review
For citations:
Kerimov E.A. ELECTROPHYSICAL PROPERTIES OF CONTACTS WITH IRSI – SI SCHOTTKY BARRIER. SibScript. 2013;(3-1):165-169. (In Russ.)
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